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氮化镓是一种具有较大禁带宽度的半导体，属于所谓宽禁带半导体之列。它是微波功率晶体管的优良材料，也是蓝色光发光器件中的一种具有重要应用值的半导体。
Gallium nitride is a semiconductor with a large band gap, which belongs to the so-called wide band gap semiconductor. It is an excellent material for microwave power transistor and a kind of semiconductor with important application value in blue light emitting devices.
氮化镓（GaN）是镓和氮的化合物，是一种具有宽带隙和刚性六万晶体 的半导体材料，带隙是从周围轨道中释放电子所需的能量原子核，在3.4ev时，氮化镓的带隙是硅的三倍以上。由于带隙材料可以控制的电场，因此氮化镓更大的带隙使得制造耗尽区非常短或窄的半导体成为可能，从而实现具有极高载流子密度的器件设计，更小的晶体管和更短的电流通道，使速度提高多达100倍。
Gallium nitride(GaN),a compound of gallium and nitrogen ,is a semiconductor material with a broad bandgap and a rigid hexagonal crystal structure.The bandgap is the energy neceessary to liberate electrons from orbits around the nucleus,and at 3.4 eV gallium nitride has a bandgap that is more than three times that of silicon.Because the bandgap controls the electric field that a material can withstand, gallium nitride's greater bandgap enables the fabricatior of semiconductors with very short or narrow depletion zones, resulting in device designs with extremely high carrier densities.Ultra-low resistance and capacitance are achieved with considerably smaller transistors and shorter current channels, enabling speeds up to 100 times quicker.
GaN技术可以在标准硅小的得多的外形尺寸下管理巨大的电场，同时还提供明显更快的开关。此外，GaN及时的提高工作温度高于硅基技术。GaN争正变得越来越重要，因为塔可以广泛的应用中明显提高性能，同时比传统的硅技术消耗更少的能量和占用更少的物理空间。
The basic line is that GaN technology can manage enormous electric fields in a considerably smaller form factor than standard silicon,while also delivering considerably faster switching. Furthermore, GaN technology has a higher maximum operating temperature than silicon-based technology.GaN is becoming more relevant because it may give dramatically increased performance across a wide range of applications while consuming less energy and taking up less physical space than traditional silicon technology.